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由LWu著作·2013—OnestepfromtypicalCMOSprocessflowisthesource/drain(S/D)activationannealing,whichthegatestackmustundergo.ThetypicalS/D ...,由JRobertson著作·2015·被引用734次—...gatelast'processflow,inadditiontothestandard'gatefirst'approach.Workfunc...
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由EErben著作·2018·被引用8次—...high-kgatedielectricintotheverycomplexCMOSprocessflows.Gatefirstandgatelasttechnologiesusedifferentmechanismstosettheworkfunctions ...
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